Publication

Abstract : In this paper first, c-axis oriented AlN Piezoelectric thin film is deposited on Mo/SiO 2 substrate by reactive magnetron sputtering method. Second, fabricated cantilever structure of deposited multilayered thin films using dry, followed by the wet etching process to complement each other to easily release the cantilever for MEMs piezoelectric energy harvester application. Deposited thin films characterized using x-ray diffraction (XRD) to confirm the c-axis oriented growth of AlN film and peak due to (110) plane of deposited molybdenum (Mo) film. Atomic force microscopy (AFM) was used to measure the surface roughness of films. Fabricated cantilever structures are characterized using field electron microscopy (FE-SEM). Measured full width of half maxima (FWHM) of deposited AlN and Mo films are 0.82 ° and 0.38° respectively, confirming good quality of films. Before, releasing of cantilever structures by the wet etching process, dry etching was used to help in easy to release and also reduced the cantilever releasing time. It was obverted that cantilevers were released within 1 hours 15 minutes using first, dry etching followed by the wet etching process, which is 2.5 times faster than only by wet etching process.