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Publication Type : Journal Article
Publisher : IJCA
Source : International Journal of Computer and Applications (IJCA), ISSN 0975-888, Vol. 47, No. 14, pp 39 – 44, June 2012.
Campus : Coimbatore
School : School of Engineering
Department : Computer Science and Engineering
Year : 2012
Abstract : In search of opto-electronic nano materials, we often come across Gallium Nitride nanotubes (GaN-NT) with excellent electrical and optical characteristics. Gallium Nitride nanotubes are predominantly semiconducting and have been less explored in its application as a transistor channel through Density Functional Theory (DFT). Comparing Gallium Nitride nanotubes with Boron Nitride nanotubes (BN-NT) and Carbon nanotubes (CNT), we have obtained distinguishing features of Gallium Nitride nanotubes. In this work, Transistor simulation with Gallium Nitride nanotubes has been reported with the nanotube as channel. Properties of various configurations of nanotubes are compared among Carbon, Boron Nitride and Gallium Nitride nanotubes.
Cite this Research Publication : Bagavathi C and Narayanan kutty K A, “Gallium Nitride Nanotube and its Application as Transistors”, International Journal of Computer and Applications (IJCA), ISSN 0975-888, Vol. 47, No. 14, pp 39 – 44, June 2012.