Publication Type : Conference Paper
Publisher : INTERNATIONAL ELECTRON DEVICES MEETING,
Source : INTERNATIONAL ELECTRON DEVICES MEETING, 1998.
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 1998
Abstract :
Cite this Research Publication : K. Onishi, Kang, C. Seok, Choi, R., Cho, H. - J., Dr. Sundararaman Gopalan, Nieh, R., Dharmarajan, E., and Lee, J. C., “Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO\~ 2 MOSFET's”, in INTERNATIONAL ELECTRON DEVICES MEETING, 1998.