Publication Type : Conference Paper
Publisher : Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, IEEE
Source : Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, IEEE (2000)
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2000
Abstract :
Cite this Research Publication : B. Hun Lee, Choi, R., Kang, L., Dr. Sundararaman Gopalan, Nieh, R., Onishi, K., Jeon, Y., Qi, W. - J., Kang, C., and Lee, J. C., “Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/)”, in Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International, 2000.