Publication Type : Journal Article
Publisher : Electron Device Letters, IEEE, IEEE
Source : Electron Device Letters, IEEE, IEEE, Volume 23, Number 5, p.249–251 (2002)
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2002
Abstract :
Cite this Research Publication : H. - J. Cho, Kang, C. Seok, Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Krishnan, S., and Lee, J. C., “Structural and electrical properties of HfO 2 with top nitrogen incorporated layer”, Electron Device Letters, IEEE, vol. 23, pp. 249–251, 2002.