Publication Type : Conference Proceedings
Publisher : 10th Atomic Layer Deposition Conference, American Vacuum Society
Source : 10th Atomic Layer Deposition Conference, American Vacuum Society. 2010.
Campus : Coimbatore
School : School of Engineering
Department : Chemical
Year : 2010
Abstract : P. Lehnen, Weber, U., Baumann, P. K., Senzaki, Y., Karim, Z., Dr. Sasangan Ramanathan, Lu, B., Reed, J., Czubatyj, W., Hudgens, S., and Dennison, C., “Void Free Gapfill and Phase Change Memory Device Characterization of GeSbTe Films Deposited Using Atomic Vapor Deposition”, 10th Atomic Layer Deposition Conference, American Vacuum Society. 2010.
Cite this Research Publication : P. Lehnen, Weber, U., Baumann, P. K., Senzaki, Y., Karim, Z., Dr. Sasangan Ramanathan, Lu, B., Reed, J., Czubatyj, W., Hudgens, S., and Dennison, C., “Void Free Gapfill and Phase Change Memory Device Characterization of GeSbTe Films Deposited Using Atomic Vapor Deposition”, 10th Atomic Layer Deposition Conference, American Vacuum Society. 2010.