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Novel Nitrogen Profile Engineering for Improved TaN/HfO\~ 2/Si MOSFET Performance

Publication Type : Conference Paper

Publisher : International Electron Devices Meeting,

Source : International Electron Devices Meeting, 1998.

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 1998

Abstract :

Cite this Research Publication : H. - J. Cho, Kang, C. S., Onishi, K., Dr. Sundararaman Gopalan, Nieh, R., Choi, R., Dharmarajan, E., and Lee, J. C., “Novel Nitrogen Profile Engineering for Improved TaN/HfO\~ 2/Si MOSFET Performance”, in International Electron Devices Meeting, 1998.

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