Publication Type : Conference Paper
Publisher : TECHPOS
Source : International Conference for Technical Postgraduates (TECHPOS), 2009 (2009)
Url : http://ieeexplore.ieee.org/document/5412109/
ISBN : 978-1-4244-5223-1
Keywords : Drain Curves, Linear MOS resistor, MOS
Campus : Coimbatore
School : School of Engineering
Department : Electronics and Communication
Year : 2009
Abstract : This paper presents an overview of MOS device characteristics and its use as voltage controlled resistors. A modified gate driving mechanism is proposed to enhance the MOS resistor properties. Generally, MOS resistors behave linearly only for a small value of Drain-to-Source voltage (VDS). With the new scheme, the non-linearity that arises out of its dependence on VDS is removed and the linearity property of the resistor is kept intact even for larger values of VDS.
Cite this Research Publication : Dr. Karthi Balasubramanian, Vineeth, K. V., Neeraj, A., and Nikhil, K. M., “MOS characteristics and a modified linear MOS resistor”, in International Conference for Technical Postgraduates (TECHPOS), 2009, 2009.
