Publications

Abstract : There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9×10−3 Torr or less, Si containing gas: 1×10−3˜3×10−1 Torr and N containing gas: 7×10−3˜6×10−1 Torr, and a pressure range of the gas is 500 mTorr˜5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less. Cite this Research Publication W. PARK, Jang, Y. J., Kim, G. Y., Lu, B., Siu, G., Silva, H., and Dr. Sasangan Ramanathan, “Method for forming TiSiN thin film layer by using atomic layer deposition”, U.S. Patent US 14/391,2942015.