Publication Type : Journal Article
Publisher : Springer-Verlag
Source : Journal of Electronic Materials, Springer-Verlag, Volume 25, Number 10, p.1628–1632 (1996)
Url : http://link.springer.com/article/10.1007/BF02655587
Keywords : Chemical-mechanical polishing, Oxide films
Campus : Coimbatore
School : School of Engineering
Center : TBI
Department : cyber Security, Chemical
Year : 1996
Abstract : An understanding of different aspects of chemical-mechanical polishing (CMP) is sought with emphasis on the polish pad degradation and conditioning during the polishing of silica films.In situ andex situ conditioning have been compared.In situ conditioning has proven to yield higher removal rates with improved, within wafer uniformities. Some of the factors contributing to the pad deterioration such as the conditioning tool down force, tool speed, and the type of solubilizing ions in the slurry is examined. The dependence on diamond particle sizes, nickel plated on to the conditioning discs, is discussed. The extent of pad wear caused by all of the above factors has been quantitatively determined and presented.
Cite this Research Publication : K. Achuthan, Curry, J., Lacy, M., Campbell, D., and Babu, S. V., “Investigation of pad deformation and conditioning during the CMP of silicon dioxide films”, Journal of Electronic Materials, vol. 25, pp. 1628–1632, 1996.