Publication Type : Journal Article
Publisher : Applied physics letters, American Institute of Physics,
Source : Applied physics letters, American Institute of Physics, Volume 82, Number 11, p.1757–1759 (2003)
Campus : Amritapuri
School : School of Engineering
Department : Electronics and Communication
Year : 2003
Abstract :
Cite this Research Publication :
M. Shahariar Akbar, Dr. Sundararaman Gopalan, Cho, H. - J., Onishi, K., Choi, R., Nieh, R., Kang, C. S., Kim, Y. H., Han, J., Krishnan, S., and , “High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal”, Applied physics letters, vol. 82, pp. 1757–1759, 2003.