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Fabrication of high quality ultra-thin HfO/sub 2/gate dielectric MOSFETs using deuterium anneal

Publication Type : Conference Paper

Publisher : Electron Devices Meeting, 2002. IEDM'02. International, IEEE

Source : Electron Devices Meeting, 2002. IEDM'02. International, IEEE (2002)

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2002

Abstract :

Cite this Research Publication : R. Choi, Onishi, K., Kang, C. Seok, Dr. Sundararaman Gopalan, Nieh, R., Kim, Y. H., Han, J. H., Krishnan, S., Cho, H. - J., Shahriar, A., and , “Fabrication of high quality ultra-thin HfO/sub 2/gate dielectric MOSFETs using deuterium anneal”, in Electron Devices Meeting, 2002. IEDM'02. International, 2002.

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