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Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates

Publication Type : Journal Article

Publisher : AIP Publishing

Source : Applied physics letters, AIP Publishing, Volume 80, Number 23, p.4416–4418 (2002)

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2002

Abstract :

Cite this Research Publication :
Dr. Sundararaman Gopalan, Onishi, K., Nieh, R., Kang, C. S., Choi, R., Cho, H. - J., Krishnan, S., and Lee, J. C., “Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates”, Applied physics letters, vol. 80, pp. 4416–4418, 2002.

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