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Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

Publication Type : Conference Paper

Publisher : 2004

Source : 2004.

Campus : Amritapuri

School : School of Engineering

Department : Electronics and Communication

Year : 2004

Abstract :

Cite this Research Publication : C. D. Young, Kerber, A., Hou, T. H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., and Dr. Sundararaman Gopalan, “Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures”, 2004.

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