Publication Type : Journal Article
Publisher : Taylor & Francis
Source : Integrated Ferroelectrics, Taylor & Francis, Volume 19, Number 1-4, p.141-148 (1998)
Url : https://doi.org/10.1080/10584589808012700
Campus : Coimbatore
School : School of Engineering
Department : Chemical
Year : 1998
Abstract : Abstract We report for the first time Ba0.6Sr0.4TiO3 (BST 60/40) thin films with Mg additive fabricated by Metalorganic decomposition technique on platinum coated silicon substrates using acetate-alkoxide precursors.[1] The structural and electrical properties of the BST thin films were greatly changed by additions of Mg. The surface morphology of the films was smooth with a dense microstructure. The typical small signal dielectric constant and the loss factor for a 0.4 μm thick undoped BST films were 450 and 0.013, respectively, at an applied frequency of 100 kHz. The dielectric loss was significantly reduced by the Mg content. The tunability (ΔC/C0) was found to change from 20.7% to 5.8% as the Mg additive content was changed from 0 to 20 mol%. The films exhibited high resistivity of the order of 1012 Ω-cm even up to an applied electric field of 100 kV/cm
Cite this Research Publication : P. C. Joshi, Dr. Sasangan Ramanathan, Desu, S. B., Stowell, S., and Sengupta, S., “Characterization of Ba0.6Sr0.4TiO3 Thin Films with Mg Additive Fabricated by Metalorganic Decomposition Technique”, Integrated Ferroelectrics, vol. 19, pp. 141-148, 1998.
